Silicon substrate LED, the "fulcrum" that spurs industrial upgrading

The LED chip substrate market has been "two cents" in both sapphire and silicon carbide. When this pattern was born with the first prize of the National Technology Invention Award last year, the silicon substrate era came along.

"In the face of the international giant's patent encirclement, the comprehensive deployment of the silicon substrate technology route not only marks a major breakthrough in the history of LED technology, but also means that China will achieve core technology autonomy in key areas upstream of LED." Industry veterans said.

From the current LED chip substrate market, although sapphire (most manufacturers) and silicon carbide (mainly CREE) still occupy most of the country, many companies have successively invested in silicon substrates. Technology development and production.

For example, several major international companies are also following the silicon substrate high-power LED chip technology: If Toshiba purchases Puri technology, it will quickly cut into the silicon substrate; Samsung announced that the next technology route and products are silicon substrates. chip.

Here, we have to emphasize the currently known crystal energy optoelectronics (nearly reaching the domestic one), which is currently the "flag" of the silicon substrate technology in Jiangxi Province, and the company has become the world's number one. A high-power, high-performance silicon substrate LED chip company.

According to public information, Jingneng Optoelectronics has previously been heavily invested by Jinshajiang Venture Capital. Under its impetus, Hong Kong stocks Shunfeng Clean Energy acquired a 59% stake in Jingneng Optoelectronics in May 2015. According to the agreement of the two parties, Jingneng Optoelectronics will be listed separately at a market value of USD 3 billion.

"At present, silicon substrate LED technology can basically be said to be the unique technology of crystal energy. Secondly, the large-scale promotion of silicon substrate LED means that most LED chip companies may withdraw from the market, for the sake of profit, some LED chip companies often amplify the shortcomings of silicon substrate LEDs when introducing products to customers," analysts pointed out.

With the silicon substrate LED technology, Jingneng Optoelectronics has doubled its revenue and profits. The history that has been passed includes: full production and sales in 2012, revenue of 33 million US dollars in 2013, and revenue of 60.99 million US dollars in 2014. At the same time, the silicon substrate LED industry chain consisting of 12 companies led by crystal energy has been expanding. In 2013 and 2014, it has exceeded 1 billion yuan and 2 billion yuan in sales.

However, the share of crystal energy in the LED chip market is still relatively small. According to the 2015 global LED chip market data compiled by the High-tech LED Industry Research Institute (GGII), Crystal Energy's revenue is much lower than that of the top ten LED chip factories.

"Indeed, in the battle for market positions, Jingneng Optoelectronics should do more to improve products, reduce costs, reduce technical difficulty, and win customers with more products and cases. Only in this way can silicon-based LEDs become the future of China's independent property rights. Products capture weapons in the global market."

At this year's National Conference, some representatives suggested that the silicon substrate LED industry should be upgraded to the national strategy during the 13th Five-Year Plan period. It is true that in the face of the competitive pressure of international companies, it is urgent to support the upgrading of silicon substrate technology and the industry to become bigger and stronger.

Note: sapphire substrate VS silicon substrate

(1) From the device point of view, the silicon substrate has good heat dissipation performance and eliminates stress by peeling, so the product has good antistatic performance, long life and high current density, and is suitable for high power LED illumination;

(2) From the point of view of the substrate stripping method, the cost of the silicon substrate is much lower than that of the sapphire substrate when preparing the thin film type chip, and the peeling is performed by chemical etching, which is higher than the laser in efficiency and yield. Stripped sapphire substrate product to obtain high quality, low cost vertical structure chips;

(3) From the perspective of mass production, future technological advances can well combine the advantages of large-size silicon substrates with the mature automation equipment and production lines of the integrated circuit industry, greatly improving the industrial maturity of the existing LED industry. The scale effect can be quickly formed, and the overall cost of LED lighting is further reduced significantly;

(4) From the perspective of product characteristics, using a single-sided light-emitting vertical structure chip combined with a white light chip process, a chip with good directionality and good light quality can be obtained, and a silicon substrate LED can be used for small-angle spotlights, automobile lighting, and mobile phones. Applications such as high-quality lighting and directional lighting are more advantageous.

Summary: Everything inevitably has its own shortcomings. Silicon substrate LEDs are also facing the cost advantage and technical difficulty. Among them, the biggest "blocker" is derived from the thermal mismatch and lattice loss of silicon and gallium nitride materials. Match.


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Barium titanate lead-free piezoelectric ceramics are important basic materials for the development of modern science and technology, which was widely used in the manufacture of ultrasonic transducers, underwater acoustic transducers, electroacoustic transducers, ceramic filters, ceramic transformers, ceramic frequency discriminators, high voltage generators, infrared detectors, surface acoustic wave devices, electro-optic devices, ignition and detonation devices, and piezoelectric gyroscope and so on.

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China Patent of Yuhai company`s BaTiO3

Chinese Patent No.: ZL 2011 1 0126758.6   

Name: Lead-free Barium Titanate Piezoelectric Material with Addition of Cobalt and Aluminum 

8



Lead free piezo material BaTiO3

Lead-free Material

Properties

 

 

BaTiO3

Dielectric Constant

ɛTr3

 

1260

Coupling factor

KP

 

0.34

 

K31

 

0.196

 

K33

 

0.43

 

Kt

 

0.32

Piezoelectric coefficient

d31

10-12m/v

-60

 

d33

10-12m/v

160

 

g31

10-3vm/n

-5.4

 

g33

10-3vm/n

14.3

Frequency coefficients

Np

 

3180

 

N1

 

2280

 

N3

 

 

 

Nt

 

2675

Elastic compliance coefficient

Se11

10-12m2/n

8.4

Machanical quality factor

Qm

 

1200

Dielectric loss factor

Tg δ

%

0.5

Density

ρ

g/cm3

5.6

Curie Temperature

Tc

°C

115

Young's modulus

YE11

<109N/m3

119

Poison Ratio

 

 

0.33

 


Lead Free Piezoelectric Elements

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Zibo Yuhai Electronic Ceramic Co., Ltd. , https://www.yhpiezo.com

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